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參數(shù)資料
| 型號： | MTP16N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 222K |
| 代理商： | MTP16N25E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
25
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 8 A
7 V
8 V
6 V
5 V
15 V
100
°
C
25
°
C
TJ = 100
°
C
–55
°
C
32
24
16
8
0
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
32
24
16
8
0
32
24
16
8
0
0.26
40
0.22
0.18
0.14
0.1
0.6
0.5
0.4
0
20
15
10
5
0
35
30
25
0.3
0.2
0.1
TJ = 125
°
C
100
50
0
1000
100
10
1
150
200
250
300
0
50
–50
1.0
0.5
0
150
100
125
25
–25
75
2.0
1.5
3.0
2.5
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