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參數(shù)資料
| 型號(hào)： | MTM76420 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, WSMINI6-F1, 6 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 268K |
| 代理商： | MTM76420 |
Silicon MOS FETs (Small Signal)
Publication date: September 2009
SJF00090BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM76420
Silicon P-channel MOS FET
For DC-DC converter circuits
For switching circuits
Overview
MTM76420 is the dual P-channel MOS FET that is highly suitable for DC-
DC converter and other switching circuits.
Features
Dual P-channel MOS FET in one package
Low ON resistance: Ron = 100 mW (VGS = 4.0 V)
Low short-circuit input capacitance (common source): Ciss = 440 pF
Small package: WSMini6-F1-B (2.1 mm × 2.0 mm × 0.7 mm)
Low drive voltage: 1.8 V drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
-
20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
-
1.2
A
Peak drain current
IDP
-
7
A
Power dissipation *
PD
700
mW
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
PD absolute maximum rating without a heat shink: 150 mW
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = -1 mA, VGS = 0
-
20
V
Drain-source cutoff current
IDSS
VDS = -20 V, VGS = 0
-
1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = -1.0 mA, VDS = -10 V
-
0.40
-
0.85
-
1.30
V
Drain-source ON resistance 1 *1
RDS(on)1 ID = -1 A, VGS = -4.0 V
100
130
mW
Drain-source ON resistance 2 *1
RDS(on)2 ID = - 0.6 A, VGS = -2.5 V
130
200
mW
Drain-source ON resistance 3 *1
RDS(on)3 ID = - 0.2 A, VGS = -1.8 V
150
280
mW
Forward transfer admittance *1
Yfs ID = -1.0 A, VDS = -10 V, f = 1 MHz
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
440
pF
Short-circuit output capacitance (Common source)
Coss
40
pF
Reverse transfer capacitance (Common source)
Crss
38
pF
Turn-on time *2
ton
VDD = -10V,VGS = 0Vto -4V, ID = -1A
35
ns
Turn-off time *2
toff
VDD = -10V,VGS = -4Vto 0V, ID = -1A
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Test circuit
Package
Code
WSMini6-F1-B
Pin Name
1: Source
4: Source
2: Gate
5: Gate
3: Drain
6: Drain
Marking Symbo: JC
Internal Connection
3
(D2)
(S2)
4
1
(S1)
2
(G1)
FET1
FET2
(D1)
6
(G2)
5
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