- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96093 > MTM15624 (PANASONIC CORP) 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MTM15624 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, MINI5-G1, 5 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | MTM15624 |
Multi Chip Discrete
Publication date: November 2008
SJF00108AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM15624
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For switching circuits
Overview
MTM15624 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for switching circuits.
Features
Built-in schottky barrier diode: VR = 20 V, IF = 700 mA
Low on-resistance: Ron = 100 mW (VGS = –4.0 V)
Low short-circuit input capacitance (Common source): Ciss = 400 pF
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
VDSS
–20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
–2.1
A
Peak drain current
IDP
–8
A
Channel temperature
Tch
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
SBD
Reverse voltage
VR
20
V
Forward current (Average)
IF(AV)
700
mA
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Overall Total power dissipation *
PD
600
mW
Note) *: Measuring on ceramic substrate at 40 mm × 38 mm × 0.1 mm
Absolute maximum rating without heat sink for PD is 300 mA
Package
Code
Mini5-G1
Pin Name
1: Cathode
4: Source
2: Drain
5: Anode
3: Gate
Marking Symbol: KL
Internal Connection
2
(D)
1
(K)
(A)
5
(S)
4
(G)
3
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTM15N40 | 15 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| MTM15N35 | 15 A, 350 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| MTM1N95 | 1 A, 950 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| MTP1N100 | 1 A, 1000 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP1N95 | 1 A, 950 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTM15N05L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTM15N06L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTM15N20 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTM15N40E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTM15N45 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。