參數(shù)資料
型號: MTD6P10E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
中文描述: 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 10/10頁
文件大?。?/td> 261K
代理商: MTD6P10E
10
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 369A–13
ISSUE W
STYLE 2:
PIN 1.
GATE
DRAIN
SOURCE
DRAIN
2.
3.
4.
D
A
K
B
R
V
S
F
L
G
2 PL
0.13 (0.005)
M
T
E
C
U
J
H
–T–
SEATING
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.033
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.175
0.020
0.020
0.030
0.138
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.45
0.51
0.51
0.77
3.51
MAX
6.35
6.73
2.38
0.88
1.01
1.19
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.050
–––
0.050
–––
5.46
1.27
–––
1.27
–––
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
相關(guān)PDF資料
PDF描述
MTM55N10 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
MTM60N06 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
MTP1302 TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm
MTP1306 TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
MTP15N06V TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
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