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參數(shù)資料
| 型號： | MTD4N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D, DPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MTD4N20E |
MTD4N20E
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
,SINGLE
PULSE
DRAINT
OSOURCE
ASE
TJ, STARTING JUNCTION TEMPERATURE (°C)
AV
ALANCHE
ENERGY
(mJ)
80
25
50
75
100
125
150
100
1.0
0.1
0.01
0.1
1.0
10
100
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
1.0
0.1
0.01
1.0E05
t, TIME (s)
0.2
0.1
0.05
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10
ID = 4A
60
40
20
0
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
D = 0.5
0.02
0.01
SINGLE PULSE
10 s
100 s
1 ms
10 ms
dc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD4N20E1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20E-1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10ET4 | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10E | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10EG | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD4N20E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTD4N20ET4 | 制造商:Motorola 功能描述:4N20 MOT'96 SMT/REEL |
| MTD4P05 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD4P06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD5010M | 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Ultra High Speed Photo Diode |
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