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參數(shù)資料
| 型號： | MTD2N40E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 118K |
| 代理商： | MTD2N40E |
MTD2N40E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
–
451
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
3.2
7.0
4.0
–
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
–
3.1
3.5
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125°C)
VDS(on)
–
7.3
–
8.4
7.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
gFS
0.5
1.0
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
229
320
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
34
40
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
–
7.3
10
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
8.0
16
ns
Rise Time
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS =10Vdc
tr
–
8.4
14
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
12
26
Fall Time
RG 9.1 )
tf
–
11
20
Gate Charge
QT
–
8.6
12
nC
(VDS = 320 Vdc, ID = 2.0 Adc,
Q1
–
2.6
–
(VDS 320 Vdc, ID 2.0 Adc,
VGS = 10 Vdc)
Q2
–
3.2
–
Q3
–
5.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.88
0.76
1.2
–
Vdc
Reverse Recovery Time
trr
–
156
–
ns
(IS =20Adc VGS = 0 Vdc
ta
–
99
–
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
57
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
0.89
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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