- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MTD2955V (MOTOROLA INC) TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM PDF資料下載
參數(shù)資料
| 型號(hào)： | MTD2955V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| 中文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MTD2955V |
5
Motorola TMOS Power MOSFET Transistor Device Data
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
V
V
RG, GATE RESISTANCE (OHMS)
1
10
100
t
VDD = 30 V
ID = 12 A
VGS = 10 V
TJ = 25
°
C
tf
td(off)
td(on)
0
QT, TOTAL CHARGE (nC)
2
4
6
8
20
ID = 12 A
TJ = 25
°
C
VGS
1000
100
10
1
10
6
2
0
1
8
4
30
27
24
21
18
15
0
VDS
18
14
QT
Q1
Q2
Q3
16
10
12
tr
7
3
9
5
12
3
6
9
0.5
0.7
1.1
1.9
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
I
VGS = 0 V
TJ = 25
°
C
0
6
5
8
7
10
9
12
11
4
3
0.9
1.3
1.5
2
1
1.7
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD2955V | P-Channel Enhancement Mode Field Effect Transistor |
| MTD2N50 | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
| MTD6N20E | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM |
| MTD6P10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
| MTM55N10 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955VG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955VT4 | 功能描述:MOSFET P-CH 60V 12A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。