參數(shù)資料
型號: MTD1N50E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: IC REG LDO 1.5A ADJ VOLT TO263-5
中文描述: 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 267K
代理商: MTD1N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
10 V
25
°
C
TJ = 100
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
ID = 0.5 A
8 V
7 V
6 V
5 V
VGS = 10 V
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
15 V
TJ = 125
°
C
2.0
1.75
0
10
8
6
4
0
6.0
2.5
2.0
1.5
1.0
0.5
0
– 50
10000
1
0
2
4
6
8
10
12
14
16
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.5
0
0.4
0.8
1.2
1.6
2.0
0
0.25
– 25
0
25
50
75
100
125
150
0
100
200
300
500
2
5.5
5.0
4.5
4.0
3.5
3.0
100
25
°
C
100
°
C
1.50
1.25
1.0
0.75
0.50
0.25
2.0
1.75
0
1.50
1.25
1.0
0.75
0.50
0.25
5.5
6.0
0.50
0.75
1.0
1.25
1.50
1.75
2.0
1000
10
400
TJ = 100
°
C
–55
°
C
相關(guān)PDF資料
PDF描述
MTD1N60E TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD1N60E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
MTD1N80E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
MTD1P40ET4 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTD1P50E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM
MTD2001 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs