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參數(shù)資料
| 型號(hào)： | MTD15N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM |
| 中文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | MTD15N06VL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
1
2
3
5
7
0
10
20
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
10
0
5
10
20
30
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
5
10
15
20
30
0
0.05
0.10
0.20
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
40
50
60
10
100
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
TJ = – 55
°
C
25
°
C
100
°
C
VGS = 0 V
TJ = 125
°
C
5
15
25
4
6
15
25
25
30
VDS
≥
10 V
0.15
R
ID, DRAIN CURRENT (AMPS)
TJ = 25
°
C
0.13
0.11
0.09
0.07
0.05
10
5
0
15
20
25
30
VGS = 10 V
15 V
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 7.5 A
2
1.6
1.2
0.8
0.4
–50
–25
0
25
50
75
100
125
150
175
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | IC REG LDO 1.5A ADJ VOLT TO263-5 |
| MTD1N60E | TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD20N06HD | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD15N06VL1 | 制造商:ON Semiconductor 功能描述: |
| MTD15N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD15N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK T/R |
| MTD1N40 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
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