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參數(shù)資料
| 型號： | MTB8N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 200K |
| 代理商： | MTB8N50E |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MTB8N50E/D
MTB8N50E
Designer’s Data Sheet
TMOS EFET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide enhanced
voltageblocking capability without degrading performance over
time. In addition, this advanced TMOS EFET is designed to
withstand high energy in the avalanche and commutation modes. This
new energy efficient design also offers a draintosource diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specifically Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to
Part Number
http://onsemi.com
TMOS POWER FET
8.0 AMPERES, 500 VOLTS
RDS(on) = 0.8 W
D2PAK
CASE 418B02
Style 2
D
S
G
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