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    參數(shù)資料
    型號: MTB60N06HDT4
    廠商: ON SEMICONDUCTOR
    元件分類: JFETs
    英文描述: 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
    封裝: CASE 418B-03, D2PAK-3
    文件頁數(shù): 5/11頁
    文件大小: 279K
    代理商: MTB60N06HDT4
    MTB60N06HD
    http://onsemi.com
    3
    TYPICAL ELECTRICAL CHARACTERISTICS
    R
    DS(on)
    ,DRAINT
    OSOURCE
    RESIST
    ANCE
    (NORMALIZED)
    R
    DS(on)
    ,DRAINT
    OSOURCE
    RESIST
    ANCE
    (OHMS)
    R
    DS(on)
    ,DRAINT
    OSOURCE
    RESIST
    ANCE
    (OHMS)
    ID, DRAIN CURRENT (AMPS)
    TJ, JUNCTION TEMPERATURE (°C)
    VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
    I DSS
    ,LEAKAGE
    (nA)
    ID, DRAIN CURRENT (AMPS)
    I D
    ,DRAIN
    CURRENT
    (AMPS)
    VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
    VGS, GATETOSOURCE VOLTAGE (VOLTS)
    I D
    ,DRAIN
    CURRENT
    (AMPS)
    0
    20
    40
    80
    120
    100
    60
    0
    1.0
    2.0
    3.0
    4.0
    5.0
    0
    20
    40
    80
    120
    Figure 1. OnRegion Characteristics
    2.0
    2.8
    3.6
    4.4
    6.0
    7.6
    Figure 2. Transfer Characteristics
    0
    20
    40
    60
    80
    120
    0.006
    0.008
    0.012
    0.016
    0.020
    0.0100
    0.0108
    0.0116
    0.0124
    0.0132
    Figure 3. OnResistance versus Drain Current
    and Temperature
    Figure 4. OnResistance versus Drain Current
    and Gate Voltage
    50
    0.6
    0.8
    1.0
    1.4
    1.8
    010
    20
    40
    50
    60
    1
    10
    100
    1000
    Figure 5. OnResistance Variation with
    Temperature
    Figure 6. DraintoSource Leakage
    Current versus Voltage
    25
    0
    25
    50
    75
    100
    125
    150
    100
    60
    0.5
    1.5
    2.5
    3.5
    4.5
    6.8
    0.018
    0.014
    0.010
    100
    0
    20
    40
    60
    80
    120
    100
    0.0128
    0.0120
    0.0112
    0.0104
    1.2
    1.6
    30
    VGS = 10 V
    9 V
    8 V
    100
    °C
    25
    °C
    TJ = 55°C
    TJ = 25°C
    15 V
    VGS = 10 V
    55
    °C
    VGS = 0 V
    TJ = 125°C
    100
    °C
    25
    °C
    5 V
    6 V
    TJ = 25°C
    7 V
    10
    30
    50
    70
    90
    110
    10
    30
    50
    70
    90
    110
    VDS ≥ 10 V
    5.2
    VGS = 10 V
    ID = 30 A
    TJ = 100°C
    25
    °C
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