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參數(shù)資料
| 型號(hào)： | MTB60N06HDT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 279K |
| 代理商： | MTB60N06HDT4 |
MTB60N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
20
40
80
120
100
60
0
1.0
2.0
3.0
4.0
5.0
0
20
40
80
120
Figure 1. OnRegion Characteristics
2.0
2.8
3.6
4.4
6.0
7.6
Figure 2. Transfer Characteristics
0
20
40
60
80
120
0.006
0.008
0.012
0.016
0.020
0.0100
0.0108
0.0116
0.0124
0.0132
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.0
1.4
1.8
010
20
40
50
60
1
10
100
1000
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage
Current versus Voltage
25
0
25
50
75
100
125
150
100
60
0.5
1.5
2.5
3.5
4.5
6.8
0.018
0.014
0.010
100
0
20
40
60
80
120
100
0.0128
0.0120
0.0112
0.0104
1.2
1.6
30
VGS = 10 V
9 V
8 V
100
°C
25
°C
TJ = 55°C
TJ = 25°C
15 V
VGS = 10 V
55
°C
VGS = 0 V
TJ = 125°C
100
°C
25
°C
5 V
6 V
TJ = 25°C
7 V
10
30
50
70
90
110
10
30
50
70
90
110
VDS ≥ 10 V
5.2
VGS = 10 V
ID = 30 A
TJ = 100°C
25
°C
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| MTB75N06HDT4 | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N06HD | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N06HDT4 | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
| MTB60N10E7L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N10E7LT4 | 制造商:Motorola Inc 功能描述: |
| MTB60P06H8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
| MTB6N60 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 6.0 AMPERES 600 VOLTS |
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