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參數(shù)資料
| 型號(hào)： | MTB60N06HD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 279K |
| 代理商： | MTB60N06HD |
MTB60N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
71
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
μAdc
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/°C
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 30 Adc)
RDS(on)
0.011
0.014
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ =125°C)
VDS(on)
1.0
0.9
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 30 Adc)
gFS
15
20
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1950
2800
pF
Output Capacitance
Coss
660
920
Transfer Capacitance
Crss
147
300
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
(VDD= 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
14
26
ns
Rise Time
tr
197
394
TurnOff Delay Time
td(off)
50
102
Fall Time
tf
124
246
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc)
QT
51
71
nC
Q1
12
Q2
24
Q3
21
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.99
0.89
1.0
Vdc
Reverse Recovery Time
(See Figure 15)
(IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
60
ns
ta
36
tb
24
Reverse Recovery Stored Charge
QRR
0.143
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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相關(guān)代理商/技術(shù)參數(shù) |
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| MTB60N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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