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參數(shù)資料
| 型號(hào)： | MTB60N06 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 60 AMPERES 60 VOLTS |
| 中文描述： | TMOS是功率FET 60安培60伏特 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 280K |
| 代理商： | MTB60N06 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID, DRAIN CURRENT (AMPS)
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
0
20
40
80
120
100
60
0
1.0
2.0
3.0
4.0
5.0
0
20
40
80
120
Figure 1. On–Region Characteristics
2.0
2.8
3.6
4.4
6.0
7.6
Figure 2. Transfer Characteristics
0
20
40
60
80
120
0.006
0.008
0.012
0.016
0.020
0.0100
0.0108
0.0116
0.0124
0.0132
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.0
1.4
1.8
0
10
20
40
50
60
1
10
100
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage
Current versus Voltage
– 25
0
25
50
75
100
125
150
100
60
0.5
1.5
2.5
3.5
4.5
6.8
0.018
0.014
0.010
100
0
20
40
60
80
120
100
0.0128
0.0120
0.0112
0.0104
1.2
1.6
30
VGS = 10 V
9 V
8 V
100
°
C
25
°
C
TJ = – 55
°
C
TJ = 25
°
C
15 V
VGS = 10 V
VGS = 10 V
– 55
°
C
VGS = 0 V
TJ = 125
°
C
100
°
C
25
°
C
5 V
6 V
TJ = 25
°
C
7 V
10
30
50
70
90
110
10
30
50
70
90
110
VDS
≥
10 V
5.2
VGS = 10 V
ID = 30 A
TJ = 100
°
C
25
°
C
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