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參數(shù)資料
| 型號(hào)： | MT8LSDT3264AG-13E |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM MODULE |
| 中文描述： | 同步DRAM模塊 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 614K |
| 代理商： | MT8LSDT3264AG-13E |
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
15
2002, Micron Technology Inc.
Table 16: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11; notes appear on page 17
Module AC timing parameters comply with PC100 and PC133 Design Specs, based on component parameters
ACCHARACTERISTICS
-13E
-133
-10E
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Access timefrom CLK (pos.edge)
CL=3
t
AC(3)
t
AC(2)
t
AH
t
AS
t
CH
t
CL
t
CK(3)
t
CK(2)
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ(3)
t
HZ(2)
t
LZ
t
OH
t
OH
N
t
RAS
t
RC
t
RCD
t
REF
t
RFC
t
RP
t
RRD
5.4
5.4
6
ns
27
CL=2
5.4
6
6
ns
Address hold time
0.8
0.8
1
ns
Address setup time
1.5
1.5
2
ns
CLK high-level width
2.5
2.5
3
ns
CLK low-level width
2.5
2.5
3
ns
Clock cycle time
CL=3
7
7.5
8
ns
23
CL = 2
7.5
10
10
ns
23
CKE hold time
0.8
0.8
1
ns
CKE setup time
1.5
1.5
2
ns
CS#, RAS#, CAS#, WE#, DQM hold time
0.8
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup time
1.5
1.5
2
ns
Data-in hold time
0.8
0.8
1
ns
Data-in setup time
1.5
1.5
2
ns
Data-out high-impedance time
CL = 3
5.4
5.4
6
ns
10
CL = 2
5.4
6
6
ns
10
Data-out low-impedance time
1
1
1
ns
Data-out hold time (load)
3
3
3
ns
Data-out hold time (no load)
1.8
1.8
1.8
ns
28
ACTIVE to PRECHARGE command
37
120,000
44
120,000
50
120,000
ns
29
ACTIVE to ACTIVE command period
60
66
70
ns
ACTIVE to READ or WRITE delay
15
20
20
ns
Refresh period (8,192 rows)
64
64
64
ms
AUTOREFRESH period
66
66
70
ns
PRECHARGE command period
15
20
20
ns
ACTIVE bank a to ACTIVE bank b
command
Transition time
14
15
20
ns
t
T
0.3
1.2
0.3
1.2
0.3
1.2
ns
7
WRITE recovery time
t
WR
1 CLK
+
7ns
14
67
1 CLK
+
7.5ns
15
75
1 CLK
+
7ns
15
80
ns
24
ns
ns
25
20
Exit SELF REFRESH to ACTIVE command
t
XSR
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相關(guān)代理商/技術(shù)參數(shù) |
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| MT8LSDT3264AG-13EB1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 2GBIT 168UDIMM - Trays |
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| MT8LSDT3264AG-13EC2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 2GBIT 168UDIMM - Trays |
| MT8LSDT3264AG-13EG1 | 制造商:Micron Technology Inc 功能描述:256MB 32MX64 SDRAM MODULE COMMERCIAL DIMM 3.3V NON BUF - Trays |
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