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參數(shù)資料
| 型號： | MT6V16M18 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 512K x 18 x 32 banks RDRAM(512K x 18 x 32組 同步動態(tài)RAM) |
| 中文描述： | 為512k × 18 × 32銀行的RDRAM（為512k × 18 × 32組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MT6V16M18 |
4
256Mb/288Mb: 16 Meg x 16/18 RDRAM
256MRDRAM_2.p65
–
Rev. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb/288Mb: 16 MEG x 16/18
RDRAM
ADVANCE
Table 1
Cross Reference for Abbreviated Device Marks
CLK FREQ.
(MHz)
300
356
356
400
400
300
356
356
400
400
A CCESS
TIME (ns) MA RKING
53
50
45
45
40
53
50
45
45
40
SA MPLE
PRODUCTION
MA RKING
DKHDZ
DKHDY
DKHDX
DKHDV
DKHDT
DKJFZ
DKJFY
DKJFX
DKJFV
DKJFT
PA RT NUMBER
MT6V16M16F2-3M
MT6V16M16F2-3B
MT6V16M16F2-3C
MT6V16M16F2-4C
MT6V16M16F2-4D
MT6V16M18F2-3M
MT6V16M18F2-3B
MT6V16M18F2-3C
MT6V16M18F2-4C
MT6V16M18F2-4D
D7HDZ
D7HDY
D7HDX
D7HDV
D7HDT
D7JFZ
D7JFY
D7JFX
D7JFV
D7JFT
DEVICE MARKING
Due to the size of the package, Micron’s standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used (see Figure 1). The
abbreviated device marks are cross referenced to the
Micron part numbers in Table 1.
D7KFW
Speed Grade
Z = -3M
Y = -3B
X = -3C
V = -4C
T = -4D
Number of DQ Pins
D = 16 DQ standard pinout
F = 18 DQ standard pinout
Device Density
H = 256Mb
J = 288Mb
Product Type
7 = RDRAM engineering sample device
(84-pin, 2-row depopulated pinout)
K = RDRAM production device
(84-pin, 2-row depopulated pinout)
Product Group
D = DRAM
Figure 1
Abbreviated Device Mark
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micronsemi.com, Internet: http://www.micronsemi.com, Customer Comment Line: 800-932-4992
Micron is a registered trademark of Micron Technology, Inc.
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