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| 型號(hào)： | MT6L58AE |
| 廠商： | Toshiba Corporation |
| 英文描述： | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| 中文描述： | 硅晶體管型瑞展?超高頻波段低噪聲放大器應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 87K |
| 代理商： | MT6L58AE |
MT6L58AE
2003-07-31
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AE
VHF~UHF Band Low Noise Amplifier Applications
Two devices are built in to the super-thin and extreme super mini (6
pins) package: ES6
Mounted Devices
Q1: SSM (TESM)
Q2: SSM (TESM)
Three-pins (SSM/TESM) mold
products are corresponded.
MT3S06S
(MT3S06T)
MT3S03AS
(MT3S03AT)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
V
CBO
10
10
V
Collector-emitter voltage
V
CEO
5
5
V
Emitter-base voltage
V
EBO
1.5
2
V
Collector current
I
C
15
40
mA
Base current
I
B
7
10
mA
Collector power dissipation
P
C
(Note 1)
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note 1: Total power dissipation of Q1 and Q2.
Marking
Pin Assignment
(top view)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 0.003 g (typ.)
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