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參數(shù)資料
| 型號： | MT4S32U |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type |
| 中文描述： | 東芝硅晶體管型瑞展 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 161K |
| 代理商： | MT4S32U |
MT4S32U
2000-09-11 2/8
Microwave Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
f
T
V
CE
=
3 V, I
C
=
10 mA
13
16
GHz
|S21e|
2
(1)
|S21e|
2
(2)
V
CE
=
3 V, I
C
=
10 mA, f
=
1 GHz
16.5
19
21.5
dB
Insertion gain
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
11.5
13.5
16.5
dB
NF(1)
NF(2)
V
CE
=
3 V, I
C
=
3 mA, f
=
1 GHz
1.0
1.4
dB
Noise figure
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
1.4
1.8
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
I
EBO
V
CB
=
8 V, I
E
=
0
1
μ
A
Emitter cut-off current
V
EB
=
1 V, I
C
=
0
1
μ
A
DC current gain
h
FE
C
ob
C
re
V
CE
=
3 V, I
C
=
10 mA
50
150
Output capacitance
0.4
0.65
pF
Reverse transfer capacitance
V
CB
=
3 V, I
E
=
0, f
=
1 MHz
(Note)
0.2
0.45
pF
Note:
C
re
is measured by 3 terminal method with capacitance bridge.
CAUTION: This device electrostatic sensitivity. Please handle with caution.
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