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參數(shù)資料
| 型號： | MT4S100U |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2K1E, USQ, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MT4S100U |
MT4S100U
2007-11-01
1
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT4S100U
UHF Low Noise Amplifier Application
Features
Low Noise Figure :NF=0.72dB (@f=2GHz)
High Gain:|S21e|2=16.0dB (@f=2GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
6
V
Collector-Emitter voltage
VCEO
3
V
Emitter-Base voltage
VEBO
1.2
V
Collector-Current
IC
15
mA
Base-Current
IB
7
mA
Collector Power dissipation
PC
45
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2K1E
Weight: 0.006 g (typ.)
Type name
P 6
2
1
3
4
2.1±0.1
1.25±0.1
2.0
±
0.2
1.
3
±
0.
1
0.
7
0.
95
+0
.0
5
–0.
15
0
～
0.
1
0.
15
±
0.
05
0.2
–0.
05
+0
.1
1
2
34
1.BASE
2.EMITTER
3.COLLECTOR
4.EMITTER
USQ
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