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參數(shù)資料
| 型號： | MT49H16M16FM |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | REDUCED LATENCY DRAM RLDRAM |
| 中文描述： | 低延遲DRAM延遲DRAM |
| 文件頁數(shù)： | 19/43頁 |
| 文件大?。?/td> | 652K |
| 代理商： | MT49H16M16FM |
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19
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
￡
T
J
￡
+110°C; +1.75V
￡
V
DD
￡
+1.85V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Clock Input Leakage Current
Input Leakage Current
Output Leakage Current
Reference Voltage Current
CONDITIONS
Matched Impedance Mode
Matched Impedance Mode
Matched Impedance Mode
Matched Impedance Mode
HSTL Strong
HSTL Strong
HSTL Strong
HSTL Strong
HSTL Weak
HSTL Weak
HSTL Weak
HSTL Weak
SYM
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
OH
V
OL
I
LC
I
LI
I
LO
I
REF
MIN
MAX
UNITS NOTES
V
V
V
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
V
REF
+ 0.15
V
SS
Q - 0.3
V
DD
Q
V
DD
Q + 0.3
V
REF
- 0.15
1, 2
1, 2
1, 3, 4
1, 3, 4
1, 2
1, 2
1, 3, 4
1, 3, 4
1, 2
1, 2
1, 3, 4
1, 3, 4
0
V
REF
+ 0.1
V
SS
Q - 0.3
V
DD
Q - 0.4
V
DD
Q + 0.3
V
REF
- 0.1
0.4
-5
-5
-5
-5
5
5
5
5
0V ￡ V
IN
￡ V
DD
Q
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
During normal operation, V
DD
Q must not exceed V
DD
. Control input signals may not have pulse widths less than
t
KHKL
(MIN) or operate at cycle rates less than
t
KHKH (MIN).
3. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
V
IH
(AC)
￡
V
DD
+ 0.7V for t
￡
t
KHKH/2
V
IL
(AC) 3 -0.5V for t
￡
t
KHKH/2
V
IH
￡
V
DD
Q + 0.3V and V
DD
￡
1.7V and V
DD
Q
￡
1.4V for t
￡
200ms
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