
29
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
        2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP 
BANK 
n
NOP
NOP
NOP
NOP
D
IN
a
 + 1
D
IN
a
NOP
NOP
T7
BANK 
n
BANK 
m
ADDRESS
NOTE:
  1. DQM is LOW. 
BANK 
n
,
COL 
a
BANK 
m
,
COL 
d
READ - AP 
BANK 
m
Internal 
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
READ with Burst of 4
t
tRP - BANK
 m
D
OUT
d
D
OUT
d 
+ 1
CAS Latency = 3 (BANK 
m
)
RP - BANK 
n
WR - BANK 
n
Figure 26
WRITE With Auto Precharge Interrupted by a READ
DON’T CARE
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP 
BANK 
n
NOP
NOP
NOP
NOP
D
IN
d
 + 1
D
IN
d
D
IN
a
 + 1
D
IN
a
 + 2
D
IN
a
D
IN
d
 + 2
D
IN
d
 + 3
NOP
T7
BANK 
n
BANK 
m
ADDRESS
NOP
NOTE:
  1. DQM is LOW. 
BANK 
n
,
COL 
a
BANK 
m
,
COL 
d
WRITE - AP 
BANK 
m
Internal 
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
WRITE with Burst of 4
Write-Back
WR - BANK 
n
tRP - BANK 
n
tWR - BANK 
m
Figure 27
WRITE With Auto Precharge Interrupted by a WRITE
WRITE with Auto Precharge
3. Interrupted by a READ (with or without auto
precharge): A READ to bank 
m 
will interrupt a WRITE
on bank 
n 
when registered, with the data-out appear-
ing CAS latency later. The PRECHARGE to bank 
n 
will
begin after 
t
WR is met, where 
t
WR begins when the
READ to bank 
m 
is registered. The last valid WRITE to
bank 
n 
will be data-in registered one clock prior to the
READ to bank 
m 
(Figure 26).
4. Interrupted by a WRITE (with or without auto
precharge): A WRITE to bank 
m 
will interrupt a WRITE
on bank 
n 
when registered. The PRECHARGE to bank
n 
will begin after 
t
WR is met, where 
t
WR begins when
the 
WRITE 
to 
bank 
The last valid data WRITE to bank 
n 
will be data
registered one clock prior to a WRITE to bank 
m
(Figure 27).
m 
is 
registered.