參數(shù)資料
型號(hào)： MT46V4M32
廠商： Micron Technology, Inc.
英文描述： DOUBLE DATA RATE DDR SDRAM
中文描述： 雙倍數(shù)據(jù)速率的DDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 17/66頁(yè)
文件大?。?/td> 1921K
代理商： MT46V4M32
17
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
Figure 8
Consecutive READ Bursts
CK
CK#
COMMAND
READ
NOP
READ
NOP
NOP
NOP
ADDRESS
Bank,
Col
n
Bank,
Col
b
COMMAND
READ
NOP
READ
NOP
NOP
NOP
ADDRESS
Bank,
Col
n
Bank,
Col
b
CL = 2
CK
CK#
DQ
DQS
CL = 3
DQ
DQS
DO
n
DO
b
DO
n
DO
b
T0
T1
T2
T3
T2n
T3n
T4
T5
T4n
T5n
T0
T1
T2
T3
T3n
T4
T5
T4n
T5n
NOTE
: 1. DO
n
(or
b
) = data-out from column
n
(or column
b
).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO
n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO
b.
5. Shown with nominal
t
AC,
t
DQSCK, and
t
DQSQ.
6. Example applies only when READ commands are issued to same device.
DON T CARE
TRANSITIONING DATA
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