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參數(shù)資料
| 型號(hào)： | MT3S16U |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | USM, 2-2E1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | MT3S16U |
MT3S16U
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16U
VHF~UHF Band Oscillator and Amplifier Applications
fT is high and current dependability is excellent.
The Cre curve is flat.
:|S21e|
2 = 4.5 dB (@ 2 V, 5 mA, 1 GHz)
: NF = 2.4 dB (@ 2 V, 10 mA, f = 1 GH)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Collector current
IC
60
mA
Base current
IB
10
mW
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2E1A
Weight: 0.006g (typ.)
Unit: mm
T4
3
1
2
USM
1.Base
2.Emitter
3.Collector
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