參數(shù)資料
型號: MT16LD1664AG-5X
廠商: Micron Technology, Inc.
英文描述: DRAM MODULE
中文描述: DRAM模塊
文件頁數(shù): 12/27頁
文件大?。?/td> 518K
代理商: MT16LD1664AG-5X
12
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65
Rev. 2/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
8, 16, 32 MEG x 64
NONBUFFERED DRAM DIMMs
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (V
DD
= +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
Refresh period (4,096 cycles)
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE# (CAS# HIGH)
WRITE command pulse width
WE# pulse width for output
disable when CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
REF
t
RP
t
RPC
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WHZ
t
WP
t
WPZ
MIN
MAX
64
MIN
MAX
64
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
30
5
0
13
116
67
13
2
8
38
0
40
5
0
15
140
79
15
2
10
45
0
18
23
50
50
12
15
5
10
5
10
t
WRH
t
WRP
8
8
10
10
ns
ns
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