參數(shù)資料
型號: MT16LD1664A
廠商: Micron Technology, Inc.
英文描述: DRAM MODULE
中文描述: DRAM模塊
文件頁數(shù): 10/27頁
文件大?。?/td> 518K
代理商: MT16LD1664A
10
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65
Rev. 2/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
8, 16, 32 MEG x 64
NONBUFFERED DRAM DIMMs
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 5, 6) (V
DD
= +3.3V ±0.3V)
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
SYMBOL
SIZE
64MB
128MB
256MB
64MB
128MB
256MB
64MB
128MB 2,720
256MB 2,736
64MB
128MB 2,400
256MB 2,416
64MB
128MB 2,720
256MB 2,736
64MB
128MB 2,560
256MB 2,576
-5
8
16
32
4
8
16
-6
8
16
32
4
8
16
UNITS NOTES
I
CC
1
mA
STANDBY CURRENT: CMOS
(RAS# = CAS# = V
DD
- 0.2V)
I
CC
2
mA
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS# = V
IL
, CAS#, address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
1,400
1,320
2,560
2,576
1,000
1,920
1,936
1,320
2,560
2,576
1,240
2,400
2,416
I
CC
3
mA
3, 24
1,240
I
CC
4
mA
3, 24
1,400
I
CC
5
mA
3, 24
1,320
I
CC
6
mA
3, 4
MA X
CAPACITANCE
PARAMETER
Input Capacitance: A0-A11
Input Capacitance: WE0#, WE2#, OE0#, OE2#
Input Capacitance: RAS0#-RAS3#
Input Capacitance: CAS0#-CAS7#
Input Capacitance: SCL, SA0-SA2
Input/Output Capacitance: DQ0-DQ63, SDA
SYMBOL 64MB 128MB 256MB UNITS NOTES
C
I
1
46
86
C
I
2
32
60
C
I
3
32
60
C
I
4
10
18
C
I
5
6
6
C
IO
12
12
168
118
60
32
6
22
pF
pF
pF
pF
pF
pF
2
2
2
2
2
2
MA X
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