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參數(shù)資料
| 型號： | MSV38082 |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | KU BAND, 3.8 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 595K |
| 代理商： | MSV38082 |
Revision Date: 10/05/05
45 V Silicon Varactor Diodes
MSV38,000 Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
nd application in tunable lters and oscillators up to 18 GHz.
Features
0 to 45 Volt tuning voltage
Tuning ratios up to 5.5 typical
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Chip
Electrical Specifications, T
A = 25 °C
Model
V
BR
MIN
V
CJ
Tuning Ratio
Q
MIN
R
S
MAX
Outline
MIN
pF
NOM
pF
MAX
pF
MIN
TYP
MSV38,060
45
0.36
0.4
0.44
4.5
5.0
4,500
1.8
C12
MSV38,064
45
0.54
0.6
0.66
4.5
5.0
3,200
1.7
C12
MSV38,067
45
0.72
0.8
0.88
4.5
5.0
3,000
1.3
C12
MSV38,069
45
0.90
1.0
1.10
5.0
5.5
2,800
1.0
C12
MSV38,075
45
1.62
1.8
1.98
5.0
5.5
2,600
0.7
C12
MSV38,082
45
3.42
3.8
4.18
5.0
5.5
2,100
0.4
C12
MSV38,087
45
5.22
5.8
6.38
5.0
5.5
1,800
0.3
C12
MSV38,092
45
8.82
9.8
10.78
5.0
5.5
1,800
0.2
C22
Test Conditions
I
R =
10 A
V
R = 4 V
F = 1 MHz
V
R = 0 V & VR = 45 V
F = 1 MHz
V
R = 4 V
F = 50
MHz
F = 1 GHz
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
45 V
Forward Current
100 mA
Power Dissipation
Chip
E28, E28X & 0805-2
H20, P55 & T86
250 mW at T
C = 25 °C, derate linearly to zero at TC = +200 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +150 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +200 °C
Operating Temperature
Chip
E28, E28X & 0805-2
H20, P55 & T86
-65
°C to +200 °C
-65
°C to +150 °C
-65
°C to +200 °C
Storage Temperature
Same as operating temperature.
Soldering Temperature
Chip
Packaged
+320
°C for 10 seconds
+260
°C peak per JEDEC J-STD-20C
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