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參數(shù)資料
| 型號(hào)： | MSV34082-T86 |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | KU BAND, 3.98 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 648K |
| 代理商： | MSV34082-T86 |
Revision Date: 10/24/05
30 V Silicon Varactor Diodes
MSV34,000, SMTD & SMTV Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
nd application in tunable lters and oscillators up to 18 GHz.
Features
0 to 30 Volt tuning voltage
Tuning ratios up to 4.7 typical
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
30 V
Forward Current
100 mA
Power Dissipation
Chip
E28, E28X, SOD323, SOT23 & 0805-2
H20, P55 & T86
250 mW at T
C = 25 °C, derate linearly to zero at TC = +200 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +150 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +200 °C
Operating Temperature
Chip
E28, E28X, SOD323, SOT23 & 0805-2
H20, P55 & T86
-65
°C to +200 °C
-65
°C to +150 °C
-65
°C to +200 °C
Storage Temperature
Same as operating temperature.
Soldering Temperature
Chip
Packaged
+320
°C for 10 seconds
+260
°C peak per JEDEC J-STD-20C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSV38082-T86 | KU BAND, 3.98 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV38092-0805-2 | KU BAND, 9.86 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV40060-H20 | KU BAND, 0.58 pF, 60 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV40087-P55 | KU BAND, 5.93 pF, 60 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MBRB1635TRRPBF | 16 A, 35 V, SILICON, RECTIFIER DIODE |
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