參數(shù)資料
型號(hào)： MSS50,448-E45
元件分類(lèi)： 射頻混頻器
英文描述： SILICON, HIGH BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
封裝： CERAMIC, CASE E45, 4 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 174K
代理商： MSS50,448-E45
Revision Date: 05/20/05
The Aeroex / Metelics MSS50,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of +2 dBm to +8
dBm per diode.
V
F , RD and CJ matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Description
Features
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Chip
Electrical Specifications, T
A = 25 C
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW per junction at T
A
T = 25 C, derate
A
linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 260 C for 5 sec.
Beam Lead Pull Strength
4 grams minimum
Model
Conguration
V
F
TYP
V
BR
MIN
V
C
J
TYP / MAX
pF
R
S
TYP
R
D
MAX
F
CO
TYP
GHz
Outline
MSS50,048-C15
Single Junction
0.5
4
0.12 / 0.15
7
15
190
C15
MSS50,062-C16
Single Junction
0.5
5
0.50 / 0.55
2
12
160
C16
Test
Conditions
I
F = 1
mA
I
R =
R
10 μA
V
R = 0 V
F = 1MHz
I
F = 5 mA
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