參數(shù)資料
型號： MSS30,B53-E45
元件分類： 射頻混頻器
英文描述： SILICON, MIXER DIODE
封裝： CERAMIC, CASE E45, 4 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 102K
代理商： MSS30,B53-E45
Revision Date: 05/20/05
The Aeroex / Metelics MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates
using proprietary processes that yield the highest FCOs in the
industry. Barrier heights for LO power levels from 3 dBm to +17
dBm are available.
Available in four barrier heights
Beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Description
Features
MSS Series
Silicon Schottky Bridge Quad
k
Diodes
Beam Lead
Electrical Specifications, T
A = 25 C
Model
V
F
TYP
mV
V
BR
MIN
V
C
J
TYP / MAX
fF
NF
TYP
dB
R
D
TYP
R
D
MAX
Outline
MSS30, B46-B45
300
3
0.10 / 0.13
6
20
25
B45
MSS30, B53-B45
270
3
0.20 / 0.25
6
10
15
B45
MSS40, B46-B45
470
3
0.10 / 0.13
6
20
25
B45
MSS40, B53-B45
430
3
0.20 / 0.25
6
10
15
B45
MSS50, B46-B45
530
3
0.10 / 0.13
6
15
20
B45
MSS50, B53-B45
500
3
0.20 / 0.25
6
10
15
B45
MSS60, B46-B45
670
3
0.10 / 0.13
6
20
25
B45
MSS60, B53-B45
670
3
0.20 / 0.25
6
13
18
B45
Test
Conditions
I
F = 1 mA
I
R = 10
R
μA
V
R = 0 V
R
F = 1 MHz
I
F = 5 mA
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW per junction at T
A
T = 25 C, derate
A
linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 260 C for 5 sec.
Beam Lead Pull Strength
4 grams minimum
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