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參數(shù)資料
| 型號(hào)： | MSS20,051-C15 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 封裝： | CASE C15, 5 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | MSS20,051-C15 |
Revision Date: 05/20/05
The Aeroex / Metelics MSS20,000 series of Schottky
diodes is fabricated on P-Type epitaxial substrates for
superior 1/f noise performance in microwave zero-bias
detector applications up to 40 GHz.
Very low 1/f Noise
Detector applications to 40 GHz
Chip, beam lead or packaged devices
Description
Features
MSS20,000 Series
Zero Bias Schottky Diodes
Model
C
J
MAX
pF
T
SS
TYP
dBm
R
V
MIN
Ω
R
V
MAX
Ω
γ
TYP
mV / mW
Frequency
MAX
GHz
Outline
MSS20,046-C15
0.10
-58
1000
2000
5000
18
C15
MSS20,047-C15
0.10
-59
2000
6000
8000
18
C15
MSS20,050-C15
0.15
-58
1000
2000
5000
12
C15
MSS20,051-C15
0.15
-59
2000
6000
8000
12
C15
MSS20,054-C15
0.20
-58
1000
2000
5000
8
C15
MSS20,055-C15
0.20
-59
2000
6000
8000
8
C15
Test
Conditions
f = 1MHz
V
R
= 0 V
R
f = 10 GHz
NF = 3dB
P
IN = -30 dBm
Video BW = 500 KHz
R
L = 1 MΩ
Chip
Electrical Specifications, T
A = 25 C
Parameters
Rating
Reverse Voltage
1.0 Volts
Forward Current
35 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
CW Power Dissipation
100 mW, derated linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 230 C for 5 sec.
Absolute Maximum Ratings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSS20,046-H27 | SILICON, ZERO BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MSS20,051-H27 | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| MSS20,047-C15 | SILICON, ZERO BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MSS20,050-H27 | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| MSS20,055-E25 | SILICON, ZERO BARRIER SCHOTTKY, C BAND, MIXER DIODE |
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