參數(shù)資料
型號: MSR860G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Soft Recovery Power Rectifier
中文描述: 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 71K
代理商: MSR860G
MSR860
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 8.0 A)
Typical
V
F
T
J
= 25
°
C
1.7
1.4
T
J
= 150
°
C
1.3
1.1
V
Maximum Instantaneous Reverse Current
(V
= 600 V)
Typical
I
R
T
J
= 25
°
C
10
2.0
T
J
= 150
°
C
1000
80
A
Maximum Reverse Recovery Time (Note 2)
(V
R
= 400 V, I
F
= 8.0 A, di/dt = 200 A/ s)
Typical
t
rr
T
J
= 25
°
C
120
95
T
J
= 125
°
C
190
125
ns
Typical Recovery Softness Factor
(V
R
= 400 V, I
F
= 8.0 A, di/dt = 200 A/ s)
s = t
b
/t
a
2.5
3.0
Maximum Peak Reverse Recovery Current
(V
R
= 400 V, I
F
= 8.0 A, di/dt = 200 A/ s)
I
RRM
5.8
8.3
A
Maximum Reverse Recovery Charge
(V
R
= 400 V, I
F
= 8.0 A, di/dt = 200 A/ s)
1. Pulse Test: Pulse Width
380 s, Duty Cycle
2%
2. T
RR
measured projecting from 25% of I
RRM
to zero current
Q
RR
350
700
nC
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
IF
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
V
F
, FORWARD VOLTAGE DROP (VOLTS)
T
C
, CASE TEMPERATURE (
°
C)
Figure 3. Current Derating, Case
100
10
600
400
300
200
100
100
10
1
1.9
1.3
0.9
0.5
1
160
120
40
0
2
4
6
14
0
I
I
500
0.1
10
8
12
T
J
= 150
°
C
100
°
C
25
°
C
RATED V
R
APPLIED
80
dc
SQUARE WAVE
1.7
1.1
0.7
1.5
T
J
= 150
°
C
100
°
C
25
°
C
125
°
C
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