參數(shù)資料
型號： MSQA6V1W5T2G
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： Quad Array for ESD Protection
中文描述： 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝： LEAD FREE, PLASTIC, CASE 419A-02, SC-70, SC-88A, 5 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 60K
代理商： MSQA6V1W5T2G
MSQA6V1W5T2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Device
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RWM
= 3 V
( A)
Capacitance
@ 0 V Bias
(pF)
Max
V
F
@ I
F
= 200 mA
(V)
Min
Nom
Max
MSQA6V1W5
6.1
6.6
7.2
1.0
90
1.25
Figure 1. Pulse Width
Figure 2. 8 x 20 s Pulse Waveform
P
p
100
10
1
1
10
100
1000
t, TIME ( s)
1000
,
NOTE: NonRepetitive Surge.
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
t, TIME ( s)
%
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
PEAK VALUE I
RSM
@ 8 s
HALF VALUE I
RSM
/2 @ 20 s
Figure 3. Pulse Derating Curve
Figure 4. Capacitance
100
90
80
70
60
50
40
30
20
10
0
0
1.0
3.0
5.0
BIAS VOLTAGE (VOLTS)
T
4.0
2.0
1
100
90
80
70
60
50
40
30
20
10
00
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
P
O
°
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