參數(shù)資料
型號(hào): MSQA6V1W5T2
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Quad Array for ESD Protection
中文描述: 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: PLASTIC, CASE 419A-02, SC-70, SC-88A, 5 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 46K
代理商: MSQA6V1W5T2
MSQA6V1W5T2
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 20 s @T
A
25
°
C (Note 1)
P
pk
150
W
Steady State Power 1 Diode (Note 2)
P
D
385
mW
Thermal Resistance Junction to Ambient
Above 25
°
C, Derate
R
JA
325
3.1
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
ESD Discharge
MIL STD 883C Method 30156
IEC100042, Air Discharge
IEC100042, Contact Discharge
V
PP
16
16
9
kV
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RWM
= 3 V
( A)
Capacitance
@ 0 V Bias
(pF)
Max
V
F
@ I
F
= 200 mA
(V)
Device
Min
Nom
Max
MSQA6V1W5
1. Nonrepetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR4 board with min pad.
6.1
6.6
7.2
1.0
90
1.25
Figure 1. Pulse Width
Figure 2. 8
×
20 s Pulse Waveform
P
p
100
10
1
1
10
100
1000
t, TIME ( s)
1000
,
NOTE: NonRepetitive Surge.
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
t, TIME ( s)
%
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
PEAK VALUE I
RSM
@ 8 s
HALF VALUE I
RSM
/2 @ 20 s
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