參數(shù)資料
型號： MSP430FG478IPNR
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PQFP80
封裝： PLASTIC, QFP-80
文件頁數(shù)： 57/91頁
文件大?。?/td> 1568K
代理商： MSP430FG478IPNR
MSP430FG47x
MIXED SIGNAL MICROCONTROLLER
SLAS580D -- OCTOBER 2008 -- REVISED MARCH 2011
60
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and Erase supply voltage
2.2
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
2.5 V/3.6V
3
5
mA
IERASE
Supply current from DVCC during erase
2.5 V/3.6V
3
7
mA
tCPT
Cumulative program time
seeNote1
2.5 V/3.6V
10
ms
tCMErase
Cumulative mass erase time
seeNote2
2.5 V/3.6V
200
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for 1st byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
see Note 3
21
t
tBlock, End
Block program end-sequence wait time
seeNote3
6
tFTG
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64--byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297x1/fFTG,max = 5297x1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
JTAG interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK input frequency
See Note 1
2.2 V
0
5
MHz
fTCK
TCK input frequency
See Note 1
3V
0
10
MHz
RInternal
Internal pull-up resistance on TMS, TCK, TDI/TCLK SeeNote2
2.2 V/ 3 V
25
60
90
k
NOTES: 1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TMS, TDI/TCLK, and TCK pull-up resistors are implemented in all versions.
JTAG fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA =25C
2.5
V
VFB
Voltage level on TDI/TCLK for fuse-blow: F versions
6
7
V
IFB
Supply current into TDI/TCLK during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES: 1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched
to bypass mode.
相關(guān)PDF資料
PDF描述
MSP430FG479IPNR 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PQFP80
MSP430FR5737IDA 16-BIT, 24 MHz, RISC MICROCONTROLLER, PDSO38
MSP430FR5739IDA 16-BIT, 24 MHz, RISC MICROCONTROLLER, PDSO38
MSP430FR5731IRHA 16-BIT, 24 MHz, RISC MICROCONTROLLER, PQCC40
MSP430FR5721IDA 16-BIT, 24 MHz, RISC MICROCONTROLLER, PDSO38
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