參數(shù)資料
型號(hào)： MSP430FG438IPN
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PQFP80
封裝： GREEN, PLASTIC, QFP-80
文件頁數(shù)： 39/73頁
文件大小： 1121K
代理商： MSP430FG438IPN
MSP430FG43x
MIXED SIGNAL MICROCONTROLLER
SLAS380C APRIL 2004 REVISED MARCH 2011
44
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted)
operational amplifier OA, supply specifications
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC
Supply voltage
—
2.2
3.6
V
Fast Mode RRIP OFF
2 2 V/3 V
180
290
Fast Mode, RRIP OFF
2.2 V/3 V
180
290
Medium Mode RRIP OFF
2 2 V/3 V
110
190
Medium Mode, RRIP OFF
2.2 V/3 V
110
190
I
Supply current
Slow Mode, RRIP OFF
2.2 V/3 V
50
80
A
ICC
Supply current
(see Note 1)
Fast Mode RRIP ON
2 2 V/3 V
300
490
μA
ICC
(see Note 1)
Fast Mode, RRIP ON
2.2 V/3 V
300
490
μA
Medium Mode RRIP ON
2 2 V/3 V
190
350
Medium Mode, RRIP ON
2.2 V/3 V
190
350
Slow Mode RRIP ON
2 2 V/3 V
90
190
Slow Mode, RRIP ON
2.2 V/3 V
90
190
PSRR
Power supply rejection ratio
Non-inverting
2.2 V/3 V
70
dB
NOTES:
1. P6SEL.x = 1 for each corresponding pin when used in OA input or OA output mode.
operational amplifier OA, input/output specifications
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
V
Voltage supply I/P
RRIP OFF
—
0.1
VCC1.2
V
VI/P
Voltage supply, I/P
RRIP ON
—
0.1
VCC+0.1
V
I
Input leakage current, I/P
TA = 40 to +55_C
—
5
±0.5
5
nA
IIkg
Input leakage current, I/P
(see Notes 1 and 2)
TA = +55 to +85_C
—
20
±5
20
nA
Fast Mode
—
50
Medium Mode
fV(I/P) = 1 kHz
—
80
V
Voltage noise density I/P
Slow Mode
fV(I/P)
1 kHz
—
140
nV/
√Hz
Vn
Voltage noise density, I/P
Fast Mode
—
30
nV/
√Hz
Medium Mode
fV(I/P) = 10 kHz
—
50
Slow Mode
fV(I/P)
10 kHz
—
65
V
Offset voltage I/P
2 2 V/3 V
±10
mV
VIO
Offset voltage, I/P
2.2 V/3 V
±10
mV
Offset temperature drift, I/P
see Note 3
2.2 V/3 V
±10
μV/°C
Offset voltage drift
with supply, I/P
0.3V
≤ VIN ≤ VCC0.3V
ΔVCC≤ ± 10%, TA = 25°C
2.2 V/3 V
±1.5
mV/V
V
High level output voltage O/P
Fast Mode, ISOURCE ≤ 500μA
2.2 V
VCC0.2
VCC
V
VOH
High-level output voltage, O/P
Slow Mode,ISOURCE ≤ 150μA
3 V
VCC0.1
VCC
V
Low level output voltage O/P
Fast Mode, ISOURCE ≤ +500μA
2.2 V
VSS
0.2
V
VOL
Low-level output voltage, O/P
Slow Mode,ISOURCE ≤ +150μA
3 V
VSS
0.1
V
RLoad= 3 kΩ, CLoad = 50pF, RRIP ON,
VO/P(OAx) < 0.2 V
2.2 V/3 V
150
250
RO/P
(OAx)
Output
Resistance
(see Figure 29 and Note 4)
RLoad= 3 kΩ, CLoad = 50pF, RRIP ON,
VO/P(OAx) > AVCC 0.2 V
2.2 V/3 V
150
250
Ω
(OAx)
(see Figure 29 and Note 4)
RLoad= 3 kΩ, CLoad = 50pF, RRIP ON,
0.2 V
≤ VO/P(OAx) ≤ AVCC 0.2 V
2.2 V/3 V
0.1
4
CMRR
Common-mode rejection ratio
Non-inverting
2.2 V/3 V
70
dB
NOTES:
1. ESD damage can degrade input current leakage.
2. The input bias current is overridden by the input leakage current.
3. Calculated using the box method.
4. Specification valid for voltage-follower OAx configuration.
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