參數(shù)資料
型號(hào)： MSP430F2618TGQWTEP
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PBGA113
封裝： PLASTIC, BGA-113
文件頁(yè)數(shù)： 68/92頁(yè)
文件大?。?/td> 1215K
代理商： MSP430F2618TGQWTEP
MSP430F2618- EP
MIXED SIGNAL MICROCONTROLLER
SLAS632 -- DECEMBER 2008
70
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
2.2 V/ 3.6 V
3
5
mA
IERASE
Supply current from DVCC during erase
2.2 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
SeeNote1
2.2 V/ 3.6 V
10
ms
tCMErase
Cumulative mass erase time
SeeNote2
2.2 V/ 3.6 V
200
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25C
100
years
tWord
Word or byte program time
SeeNote3
35
tFTG
tBlock, 0
Block program time for first byte or word
SeeNote3
30
tFTG
tBlock, 1-63
Block program time for each additional byte or word SeeNote3
21
tFTG
tBlock, End
Block program end-sequence wait time
SeeNote3
6
tFTG
tMass Erase
Mass erasetime(seeNote4)
SeeNote3
10593
tFTG
tSeg Erase
Segment erase time
SeeNote3
4819
tFTG
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297x1/fFTG,max = 5297 1/476 kHz). To
achieve the required cumulative mass erase time, the Flash Controller’s mass erase operation can be repeated until this time is met.
A worst-case minimum of 19 cycles is required.
3. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
4. To erase the complete code area, the mass erase must be performed once with a dummy address in the range of the lower 64-kB
flash addresses and once with the dummy address in the upper 64-kB flash addresses.
RAM
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VRAMh
SeeNote1
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage when the data in program memory RAM remain unchanged. No program execution
should take place during this supply voltage condition.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSP430F2618TPM 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2618TPMR 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2618TPMR-NM 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2618TPN 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2618TPNR 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
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