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| 型號(hào)： | MSMP3V-E3/89A |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 100K |
| 代理商： | MSMP3V-E3/89A |
New Product
MSP3V3
Vishay General Semiconductor
Document Number: 88486
Revision: 30-Aug-07
www.vishay.com
19
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Oxide planar chip junction
Uni-directional polarity only
Peak pulse power: 100 W (10/1000 s)
ESD capability: 15 kV (air), 8 kV (contact)
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
specifically for protecting 3.3 V supplied sensitive
equipment against transient overvoltages.
MECHANICAL DATA
Case: MicroSMP
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
VWM
3.3 V
PPPM
100 W
IFSM
25 A
TJ max.
150 °C
Top View
Bottom View
MicroSMP
eSMPTM Series
Notes:
(1) Non-repetitive current pulse, per Fig. 1
(2) Mounted on 6.0 x 6.0 mm copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation (1)(2)
PPPM
100
W
Peak pulse current with a 10/1000 s waveform (Fig. 1)
IPPM
13.7
A
Peak pulse current with a 8/20 s waveform (Fig. 1)
IPPM
75
A
Non repetitive peak forward surge current 8.3 ms single half sine-wave (2)
IFSM
25
A
Power dissipation TL = 120 °C
(2)
PD
1.0
W
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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