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參數(shù)資料
| 型號： | MSM51V64165 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 4M×16 Dynamic RAM(4M×16動態(tài)RAM) |
| 中文描述： | 4米× 16動態(tài)RAM（4米× 16動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 686K |
| 代理商： | MSM51V64165 |
1/16
Semiconductor
MSM51V64165
DESCRIPTION
The MSM51V64165 is a 4,194,304-word
￥
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM51V64165 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM51V64165 is available in a 50-pin plastic SOJ or 50-pin plastic TSOP.
FEATURES
4,194,304-word
￥
16-bit configuration
Single 3.3 V power supply,
±
0.3 V tolerance
Input
: LVTTL compatible, low input capacitance
Output
: LVTTL compatible, 3-state
Refresh
:
RAS
-only refresh
CAS
before
RAS
refresh, hidden refresh
Fast page mode with EDO, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS
-only refresh capability
Package options:
50-pin 400 mil plastic SOJ
50-pin 400 mil plastic TSOP
: 8192 cycles/64 ms
: 4096 cycles/64 ms
(SOJ50-P-400-0.80)
(TSOPII50-P-400-0.80-1K) (Product : MSM51V64165-xxTS-1K)
xx indicates speed rank.
(Product : MSM51V64165-xxJS)
PRODUCT FAMILY
4,194,304-Word
￥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
84 ns
104 ns
504 mW
432 mW
Family
Access Time (Max.)
t
RAC
50 ns
25 ns
60 ns
30 ns
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
Operating (Max.)
MSM51V64165-50
MSM51V64165-60
t
AA
t
CAC
13 ns
15 ns
t
OEA
13 ns
15 ns
1.8 mW
E2G1019-17-42
This version: Jan. 1998
Previous version: May 1997
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