參數(shù)資料
型號: MSK4301D
廠商: Electronic Theatre Controls, Inc.
英文描述: 29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
中文描述: 29安培,75V的,3相MOSFET的智能集成門極驅(qū)動橋
文件頁數(shù): 2/5頁
文件大?。?/td> 311K
代理商: MSK4301D
All Inputs Off
f=20KHz, 50% Duty Cycle
V
IN
=0V
V
IN
=5V
I
D
=25μA, All Inputs Off
V
DS
=70V
I
D
=29A
V+=28V, R
L
=1
I
D
=29A
SWR Resistor=
SWR Resistor=
SWR =
SWR=12K
I
SD
=29A
I
SD
=29A, di/dt=100A/μS
CONTROL SECTION
V
BIAS
Quiescent Current
V
BIAS
Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance (Each FET)
Drain-Source On Resistance
(Each FET, For Thermal Calculations Only)
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Turn-On Prop Delay (Lower)
Turn-Off Prop Delay (Lower)
Turn-On Prop Delay (Upper)
Turn-Off Prop Delay (Upper)
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
75V
16V
-0.3V to V
BIAS
+0.3V
29A
41A
High Voltage Supply
Bias Supply
Logic Input Voltages
Continuous Output Current
Peak Output Current
ABSOLUTE MAXIMUM RATINGS
V+
V
BIAS
V
IND
I
OUT
I
PK
1°C/W
-65°C to +150°C
+300°C
-55°C to +125°C
-40°C to +85°C
+150°C
θ
JC
T
ST
T
LD
T
C
T
J
Thermal Resistance
Storage Temperature Range
Lead Temperature Range
(10 Seconds)
Case Operating Temperature
(4301H/E)
(4301)
Junction Temperature
MMS
Typ.
2.5
20
6.6
7.1
-
-
100
-
-
-
-
120
81
0.5
5
5
0.5
5.0
1.0
1.05
120
mAmp
mAmp
Volts
Volts
Volts
Volts
μAmp
μAmp
V
μAmp
nSec
nSec
μSec
μSec
μSec
μSec
μSec
μSec
Volts
nSec
Parameter
ELECTRICAL SPECIFICATIONS
Units
Max.
8
25
7.5
8.0
0.8
-
135
+1
-
25
0.020
-
-
3
10
10
3
7.0
1.2
1.30
-
MSK4301
Min.
-
-
5.75
6.2
-
2.7
60
-1
70
-
-
-
-
-
-
-
-
3.0
0.3
-
-
Test Conditions
Rev. D 4/01
2
Typ.
2.5
20
6.6
7.1
-
-
100
-
-
-
-
120
81
0.5
5
5
0.5
5.0
1.0
1.05
120
Max.
8
25
7.5
8.0
0.8
-
135
+1
-
25
0.020
-
-
2
8
8
2
7.0
1.2
1.30
-
Min.
-
-
5.75
6.2
-
2.7
60
-1
70
-
-
-
-
-
-
-
-
3.0
0.3
-
-
GroupA
4
Subgroup
1,2,3
1,2,3
1
1
-
-
-
-
-
-
1
-
-
4
4
4
4
4
4
-
-
NOTES:
1
Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
Subgroups 5 and 6 testing available upon request.
Subgroup 1, 4 T
A
= T
C
= +25°C
2, 5 T
A
= T
C
= +125°C
3, 6 T
A
= T
C
= -55°C
2
3
4
5
1
SWR Resistor=
SWR Resistor=
1
1
1
1
1
1
1
1
1
3
2
-
0.013
0.013
-
-
-
-
1
MSK4301H/E
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MSK4301ED 29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
MSK4301ES 29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
MSK4301EU 29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSK4301ED 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
MSK4301ES 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
MSK4301EU 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
MSK4301HD 制造商:MSK 制造商全稱:M.S. Kennedy Corporation 功能描述:29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
MSK4301HS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE