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參數(shù)資料
| 型號(hào)： | MSK4300 |
| 廠商： | M.S. Kennedy Corporation |
| 英文描述： | 10 Amp, 75V, 3 Phase MOSFET Bridge with Intelligent Integrated Gate Drive(10A,75V,3相位MOSFET橋驅(qū)動(dòng)器（帶智能門(mén)驅(qū)動(dòng)控制電路）) |
| 中文描述： | 10安培，75V的，3相MOSFET的橋智能集成門(mén)極驅(qū)動(dòng)器（10A條，75V的，3相位MOSFET的橋驅(qū)動(dòng)器（帶智能門(mén)驅(qū)動(dòng)控制電路）） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 268K |
| 代理商： | MSK4300 |
All Inputs Off
f=20KHz, 50% Duty Cycle
V
IN
=0V
V
IN
=5V
I
D
=25μA, All Inputs Off
V
DS
=70V
I
D
=10A
V+=30V, R
L
=3
I
D
=10A
SWR Resistor=
∞
SWR Resistor=
∞
SWR =
∞
SWR=12K
I
SD
=10A
I
SD
=10A, di/dt=100A/μS
CONTROL SECTION
V
BIAS
Quiescent Current
V
BIAS
Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance (Each FET)
Drain-Source On Resistance
(Each FET, For Thermal Calculations Only)
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Turn-On Prop Delay (Lower)
Turn-Off Prop Delay (Lower)
Turn-On Prop Delay (Upper)
Turn-Off Prop Delay (Upper)
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
75V
16V
-0.3V to V
BIAS
+0.3V
10A
25A
High Voltage Supply
Bias Supply
Logic Input Voltages
Continuous Output Current
Peak Output Current
ABSOLUTE MAXIMUM RATINGS
V+
V
BIAS
V
IND
I
OUT
I
PK
9°C/W
-65°C to +150°C
+300°C
-55°C to +125°C
+150°C
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θ
JC
T
ST
T
LD
T
C
T
J
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Thermal Resistance
Storage Temperature Range
Lead Temperature Range
(10 Seconds)
Case Operating Temperature
Junction Temperature
Typ.
2.5
12.5
6.6
7.1
-
-
100
-
-
-
-
5
6
0.5
5
5
0.5
7.0
0.5
1.05
75
mAmp
mAmp
Volts
Volts
Volts
Volts
μAmp
μAmp
V
μAmp
nSec
nSec
μSec
μSec
μSec
μSec
μSec
μSec
Volts
nSec
Parameter
ELECTRICAL SPECIFICATIONS
Units
Max.
8
15
7.5
8.0
0.8
-
135
+1
-
25
0.300
-
-
3
10
10
3
8.0
0.7
1.25
-
MSK 4300
Min.
5.75
6.2
-
2.7
60
-1
70
-
-
-
-
-
-
-
-
6.0
0.3
-
-
Test Conditions
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Rev. C 6/00
2
Typ.
2.5
12.5
6.6
7.1
-
-
100
-
-
-
-
5
6
0.5
5
5
0.5
7.0
0.5
1.05
75
Max.
8
15
7.5
8.0
0.8
-
135
+1
-
25
0.300
-
-
2
8
8
2
8.0
0.7
1.25
-
MSK 4300H
Min.
5.75
6.2
-
2.7
60
-1
70
-
-
-
-
-
-
-
-
6.0
0.3
-
-
GroupA
4
Subgroup
1,2,3
1,2,3
1
1
-
-
-
-
-
-
1
-
-
4
4
4
4
4
4
-
-
NOTES:
1
Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
Subgroups 5 and 6 testing available upon request.
Subgroup 1, 4 T
A
= T
C
= +25°C
2, 5 T
A
= T
C
= +125°C
3, 6 T
A
= T
C
= -55°C
2
3
4
5
1
SWR Resistor=
∞
SWR Resistor=
∞
1
1
1
1
1
1
1
1
1
3
2
-
0.16
0.16
-
-
-
-
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSK4300 | 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300D | 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300HD | 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300HS | 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300HU | 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSK4300D | 制造商:MSK 制造商全稱(chēng):M.S. Kennedy Corporation 功能描述:10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300HD | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300HS | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300HU | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
| MSK4300S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE |
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