參數(shù)資料
型號： MSK3018
廠商： Electronic Theatre Controls, Inc.
元件分類： MOSFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù)： 2/5頁
文件大?。?/td> 325K
代理商： MSK3018
V
GS
=0 I
D
=0.25mA (All Transistors)
V
DS
=55V V
GS
=0V (Q2,Q4,Q6)
V
DS
=-55V V
GS
=0V (Q1,Q3,Q5)
V
GS
=±20V V
DS
=0 (All Transistors)
V
DS
=V
GS
I
D
=250μA (Q2,Q4,Q6)
V
DS
=V
GS
I
D
=250μA (Q1,Q3,Q5)
V
GS
=10V I
D
=10A (Q2,Q4,Q6)
V
GS
=-10V I
D
=-10A (Q1,Q3,Q5)
V
GS
=10V I
D
=10A (Q2,Q4,Q6)
V
GS
=10V I
D
=-10A (Q1,Q3,Q5)
V
DS
=25V I
D
=10A (Q2,Q4,Q6)
V
DS
=-25V I
D
=-10A (Q1,Q3,Q5)
I
D
=30A
V
DS
=44V
V
GS
=10V
V
DD
=28V
I
D
=30A
R
G
=2.5
R
D
=0.93
V
GS
=0V
V
DS
=25V
f=1MHz
I
D
=-10A
V
DS
=-44V
V
GS
=-10V
V
DD
=-28V
I
D
=-10A
R
G
=13
R
D
=2.6
V
GS
=0V
V
DS
=-25V
f=1MHz
I
S
=30A V
GS
=0V (Q2,Q4,Q6)
I
S
=-10A V
GS
=0V (Q1,Q3,Q5)
I
S
=30A di/dt=100A/μS (Q2,Q4,Q6)
I
S
=-10A di/dt=100A/μS (Q1,Q3,Q5)
I
S
=30A di/dt=100A/μS (Q2,Q4,Q6)
I
S
=-10A di/dt=100A/μS (Q1,Q3,Q5)
1
2
3
4
5
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
570mJ
180mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
300°C MAX
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
(Q1,Q3,Q5)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1M
)
Gate to Source Voltage (Continuous)
Continuous Current (N-Channel)
(P-Channel)
Pulsed Current (N-Channel)
(P-Channel)
Thermal Resistance (Junction to Case)
(N-Channel FETs)
(P-Channel FETs)
ABSOLUTE MAXIMUM RATINGS
V
DSS
V
DGDR
V
GS
I
D
I
DM
R
TH-JC
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T
J
T
ST
T
C
T
LD
55V MAX
55V MAX
±20V MAX
30A MAX
14A MAX
40A MAX
20A MAX
2°C/W
6°C/W
○
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Parameter
Units
MSK3018
Test Conditions
V
μA
μA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
nC
nC
Min.
55
-
-
-
2.0
-2.0
-
-
-
-
30
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
62
47
58
3400
830
240
-
-
-
13
55
130
41
620
280
140
1.3
-1.6
120
54
510
110
Max.
-
25
-25
±100
4.5
-4.5
0.04
0.16
0.013
0.10
-
-
150
24
55
-
-
-
-
-
-
-
35
7.9
16
-
-
-
-
-
-
-
-
-
190
82
760
160
ELECTRICAL SPECIFICATIONS
2
1
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
T
A
=25°C unless otherwise specified.
Test limits due to autotest fixturing constraints.
4
Rev. A 7/00
2
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5
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