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參數(shù)資料
| 型號： | MSICSS10120 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | U-4, SMD.22, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 169K |
| 代理商： | MSICSS10120 |
PRELIMINARY
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
SILICON CARBIDE
SCHOTTKY POWER RECTIFIER
T4-LDS-0110 Rev. 1 (091991)
Page 1 of 4
DEVICES
MSiCSN10120
MSiCSS10120
MSiCST10120
10A / 1200V
Silicon Carbide
Schottky Rectifier
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
MSiCST10120
TO-39
MSiCSN10120
TO-257
MSiCSS10120
U-4
(SURFACE MOUNT: SMD.22)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRWM
1200
V
Surge Peak Reverse Voltage
VRSM
1200
V
DC Blocking Voltage
VDC
1200
V
Average Forward Current, 25°C
Io
10
Apk
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
Io = 0; VRM = 0
IFSM
50
Apk
Thermal Resistance, Junction to Case
Rθjc
°C/W
Thermal Resistance, Junction to Ambient
Rθja
°C/W
Operating Junction Temperature
Tj
-65°C to +225
°C
Storage Temperature
Tstg
-65°C to +225
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage*
IF = 1A, Tj = 25°C
IF = 2.5A, Tj = 25°C
IF = 5.0A, Tj = 25°C
IF = 10.0A, Tj = 25°C
VF
1.0
1.2
1.4
1.8
V
Reverse Current
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
IR
100
200
A
Junction Capacitance
VR = 0V
f = 1MHz
Cj
1200
pF
* Pulse test: Pulse width 300 sec, Duty cycle 2%
Note:
1. Derate linearly @ tbd
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