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參數(shù)資料
| 型號(hào)： | MSG36E41 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | SiGe HBT type |
| 中文描述： | 2 CHANNEL, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSSMINI6-F1, 6 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | MSG36E41 |
MSG36E41
2
SJC00319BED
■
Electrical Characteristics (continued)
T
a
=
25
°
C
±
3
°
C
Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
3 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
1
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
1
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
1
Forward current transfer ratio
100
220
Transition frequency
*
f
T
19
GHz
Forward transfer gain
*
S
21e
2
NF
9.0
11.0
dB
Noise figure
*
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited)
*
C
ob
0.3
0.6
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3.*: Verified by random sampling
0
40
120
80
0
120
100
60
40
80
20
C
C
Ambient temperature T
a
(
°
C)
Common characteristics chart
P
C
T
a
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