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參數(shù)資料
| 型號： | MSD6150 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Diode Common Anode |
| 中文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MSD6150 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
IF
70
Vdc
Peak Forward Recurrent Current
200
mAdc
Peak Forward Surge Current
(Pulse Width = 10
μ
sec)
IFM(surge)
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD(1)
625
5.0
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
–55 to +135
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
(I(BR) = 100
μ
Adc)
V(BR)
70
—
—
Vdc
Reverse Current
(VR = 50 Vdc)
IR
—
—
0.1
μ
Adc
Forward Voltage
(IF = 10 mAdc)
VF
—
0.80
1.0
Vdc
Capacitance
(VR = 0)
C
—
5.0
8.0
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
—
—
100
ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25
°
C,
Derate above 8.0 mW/
°
C, PD = 10 W @ TC = 25
°
C, Derate above 80 mW/
°
C, TJ, Tstg = –55 to +150
°
C,
θ
JC = 12.5
°
C/W,
θ
JA = 125
°
C.
Order this document
by MSD6150/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 4
TO–92 (TO–226AA)
1
23
3 Anode
Cathode 1
2 Cathode
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