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參數(shù)資料
| 型號： | MSD42SWT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon General Purpose High Voltage Transistor |
| 中文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | MSD42SWT1G |
MSD42SWT1
http://onsemi.com
2
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE M
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
D
e1
b
e
E
A1
c
L
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
A1
A2
b
c
D
E
e
e1
MIN
0.80
0.00
NOM
0.90
0.05
0.7 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.425 REF
MAX
1.00
0.10
MIN
0.032
0.000
MILLIMETERS
INCHES
NOM
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.035
0.002
0.028 REF
0.040
0.004
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.016
0.010
0.087
0.053
0.055
MAX
L
2.00
2.10
2.40
0.079
0.083
0.095
H
E
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USA/Canada
Japan
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291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone
: 81357733850
MSD42SWT1/D
LITERATURE FULFILLMENT
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Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone
: 4808297710 or 8003443860 Toll Free USA/Canada
Fax
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSD42SWT1G_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistor |
| MSD42T1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistors |
| MSD42T1G | 功能描述:兩極晶體管 - BJT SS XSTR HV 300V TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD42WT1 | 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD42WT1G | 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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