參數(shù)資料
型號: MSD1819A-RT1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: General Purpose Amplifier Transistor(通用放大器晶體管)
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419-04, SC-70, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 52K
代理商: MSD1819A-RT1
MSD1819ART1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
50
Vdc
Collector-Base Breakdown Voltage (I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
Emitter-Base Breakdown Voltage (I
E
= 10 Adc, I
E
= 0)
V
(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current (V
CB
= 20 Vdc, I
E
= 0)
I
CBO
0.1
A
Collector-Emitter Cutoff Current (V
CE
= 10 Vdc, I
B
= 0)
I
CEO
0.1
A
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 2.0 mAdc)
(V
CE
= 2.0 Vdc, I
C
= 100 mAdc)
h
FE1
h
FE2
210
90
340
Collector-Emitter Saturation Voltage (Note 2)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
2. Pulse Test: Pulse Width
300 s, D.C.
2%.
V
CE(sat)
0.5
Vdc
Figure 1. Derating Curve
250
200
150
100
50
050
0
T
A
, AMBIENT TEMPERATURE (
°
C)
50
100
150
P
Figure 2. I
C
V
CE
V
CE
, COLLECTOR VOLTAGE (V)
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT (mA)
I
60
0
50
40
30
20
10
0
2
4
6
8
T
A
= 25
°
C
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
D
1000
0.1
100
10
1
10
100
T
A
= 25
°
C
T
A
= 25
°
C
T
A
= 75
°
C
V
CE
= 10 V
V
2
0.01
1.5
1
0.5
0
0.1
1
10
100
T
A
= 25
°
C
R
JA
= 833
°
C/W
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