參數(shù)資料
型號： MSC83301
廠商： 意法半導(dǎo)體
英文描述： RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
中文描述： 射頻
文件頁數(shù)： 1/5頁
文件大小： 96K
代理商： MSC83301
September 2, 1994
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
VSWR CAPABILITY
∞
:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC
PACKAGE
.
P
OUT
=
1.0 W MIN. WITH 7.0 dB GAIN
@ 3.0 GHz
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
DESCRIPTION
The MSC83301 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geome-
try with a refractory gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated con-
ditions. The MSC83301 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
PIN CONNECTION
BRANDING
83301
ORDER CODE
MSC83301
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
50
°
C)
Value
6.0
200
30
Unit
W
mA
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
25
°
C/W
*Appliesonlyto ratedRF amplifier operation
MSC83301
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/5
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