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參數(shù)資料
| 型號： | MSC82003 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors General Purpose Amplifier Applications(用于通用放大器的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MSC82003 |
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
EMITTER BALLASTED
.
VSWR CAPABILITY
∞
:1 @ RATED
CONDITIONS
.
REFRACTORY/GOLD METALLIZATION
.
HERMETIC STRIPAC
PACKAGE
.
P
OUT
=
3.0 W MIN. WITH 7.8 dB GAIN
@ 2.0 GHz
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
DESCRIPTION
The MSC82003 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82003 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
PIN CONNECTION
BRANDING
82003
ORDER CODE
MSC82003
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Value
21.8
600
35
Unit
W
mA
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
8.0
°
C/W
*Appliesonlyto ratedRF amplifier operation
MSC82003
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/5
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