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參數(shù)資料
| 型號： | MSC1015M |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.280 INCH, FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 37K |
| 代理商： | MSC1015M |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 10 mA
BV
CER
I
C
= 10 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
CB
= 50 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
V
R
BE
= 10
65
3.5
V
mA
---
2.5
15
120
P
G
η
C
V
CC
= 50 V P
OUT
= 15 W f = 1025 – 1150 MHz
P
IN
= 1.5 W
Pulse width = 10 μSec, Duty Cycle = 1 %
10
35
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC1015M
DESCRIPTION:
The
ASI MSC1015M
is Designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
FEATURES:
Class C Operation
P
G
= 10 dB at 15 W/1150 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
1.25 A
PEAK
V
CB
50 V
P
DISS
88 W
PEAK
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.0 °C/W
PACKAGE STYLE .280 2L FLG
1 = Collector 2 = Emitter 3 = Base
1
2
3
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