參數(shù)資料
型號(hào): MSB710QT1
廠商: Motorola, Inc.
英文描述: PNP General Purpose Amplifier Transistors Surface Mount
中文描述: 進(jìn)步黨通用放大器晶體管表面貼裝
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 125K
代理商: MSB710QT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–50
Vdc
Collector–Base Breakdown Voltage
(IC = –10
μ
Adc, IE = 0)
V(BR)CBO
–60
Vdc
Emitter–Base Breakdown Voltage
(IE = –10
μ
Adc, IC = 0)
V(BR)EBO
–7.0
Vdc
Collector–Base Cutoff Current
(VCB = –20 Vdc, IE = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –150 mAdc)
ICBO
–0.1
μ
Adc
MSB710–QT1
MSB710–RT1
(VCE = –10 Vdc, IC = 500 mAdc)
hFE1
hFE2
85
120
40
170
240
Collector–Emitter Saturation Voltage
(IC = –300 mAdc, IB = –30 mAdc)
VCE(sat)
–0.6
Vdc
Collector–Base Saturation Voltage
(IC = –300 mAdc, IB = –30 mAdc)
VBE(sat)
–1.5
Vdc
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
300
μ
s, D.C.
2%.
Cob
15
pF
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參數(shù)描述
MSB710-QT1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:PNP General Purpose Amplifier Transistors Surface Mount
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