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參數(shù)資料
| 型號(hào)： | MSASC75W45FSR |
| 廠(chǎng)商： | MICROSEMI CORP |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 75 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-1 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | MSASC75W45FSR |
Datasheet# MSC1030B
MSASC75W45F
MSASC75W45FR
45 Volts
75 Amps
Features
Platinum schottky barrier
Oxide passivated structure for low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap is anode: MSASC75W45F) and
reverse polarity (strap is cathode: MSASC75W45FR)
TXV-level (MSASC75W45FV) and S-level (MSASC75W45FS) screening
i.a.w. Microsemi Internal Procedure PS11.50 are available
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
45
Volts
Working Peak Reverse Voltage
VRWM
45
Volts
DC Blocking Voltage
VR
45
Volts
Average Rectified Forward Current, Tc
≤ 125°C
IF(ave)
75
Amps
derating, forward current, Tc
≥ 125°C
dIF/dT
4
Amps/
°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
IFSM
500
Amps
Peak Repetitive Reverse Surge Current, tp= 1
s, f= 1kHz
IRRM
2
Amp
Junction Temperature Range
Tj
-55 to +175
°C
Storage Temperature Range
Tstg
-55 to +175
°C
Thermal Resistance, Junction to Case:
MSASC75W45F
MSASC75W45FR
θ
JC
0.50
0.65
°C/W
Maximum Ratings @ 25
°C (unless otherwise specified)
Mechanical Outline
ThinKey4
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW LEAKAGE
CURRENT
SCHOTTKY DIODE
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